2Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K512M4 – 64 Meg x 4 x 8 banks
MT41K256M8 – 32 Meg x 8 x 8 banks
MT41K128M16 – 16 Meg x 16 x 8 banks
Description
•
•
•
•
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the
DDR3 (1.5V) SDRAM data sheet specifications when
running in 1.5V compatible mode.
Options
•
•
•
•
•
•
•
•
Marking
• Configuration
– 512 Meg x 4
– 256 Meg x 8
– 128 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (8mm x 10.5mm x 1.2mm)
Rev. K
• FBGA package (Pb-free) – x16
– 96-ball (8mm x 14mm x 1.2mm)
Rev. K
• Timing – cycle time
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.875ns @ CL = 7 (DDR3-1066)
• Operating temperature
– Commercial (0°C ≤ T C ≤ +95°C)
– Industrial (–40°C ≤ T C ≤ +95°C)
• Revision
Features
•
•
•
•
•
•
•
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
VDD = V DDQ = 1.35V (1.283–1.45V)
Backward-compatible to V DD = V DDQ = 1.5V ±0.075V
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
Programmable CAS (READ) latency (CL)
Programmable posted CAS additive latency (AL)
Programmable CAS (WRITE) latency (CWL)
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
TC of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
Self refresh temperature (SRT)
512M4
256M8
128M16
DA
JT
-107
-125
-15E
-187E
None
IT
:K
Table 1: Key Timing Parameters
Speed Grade
Data Rate (MT/s)
Target tRCD-tRP-CL
-1071, 2, 3
1866
13-13-13
13.91
13.91
13.91
-1251, 2
1600
11-11-11
13.75
13.75
13.75
-15E1
1333
9-9-9
13.5
13.5
13.5
-187E
1066
7-7-7
13.1
13.1
13.1
Notes:
tRCD
(ns)
tRP
(ns)
CL (ns)
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
2Gb: x4, x8, x16 DDR3L SDRAM
Description
Table 2: Addressing
Parameter
512 Meg x 4
256 Meg x 8
128 Meg x 16
Configuration
64 Meg x 4 x 8 banks
32 Meg x 8 x 8 banks
16 Meg x 16 x 8 banks
Refresh count
8K
8K
8K
32K A[14:0]
32K A[14:0]
16K A[13:0]
Row address
Bank address
Column address
8 BA[2:0]
8 BA[2:0]
8 BA[2:0]
2K A[11, 9:0]
1K A[9:0]
1K A[9:0]
Figure 1: DDR3L Part Numbers
Example Part Number:
MT41K256M8DA-107:K
-
Configuration
Package
Speed
Revision
{
MT41K
:
:K
Revision
Configuration
512 Meg x 4
512M4
Temperature
256 Meg x 8
256M8
Commercial
128 Meg x 16
128M16
Industrial temperature
Package
78-ball 8mm x 10.5mm FBGA
DA
-107
96-ball 8mm x 14mm FBGA
JT
-125
-15E
-187E
Note:
None
IT
Speed Grade
tCK = 1.071ns, CL = 13
tCK = 1.25ns, CL = 11
tCK = 1.5ns, CL = 9
tCK = 1.87ns, CL = 7
1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
FBGA Part Marking Decoder
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
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2Gb_DDR3L.pdf - Rev. O 09/18 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
Contents
Important Notes and Warnings ....................................................................................................................... 12
State Diagram ................................................................................................................................................ 13
Functional Description ................................................................................................................................... 14
Industrial Temperature ............................................................................................................................... 14
General Notes ............................................................................................................................................ 14
Functional Block Diagrams ............................................................................................................................. 16
Ball Assignments and Descriptions ................................................................................................................. 18
Package Dimensions ....................................................................................................................................... 24
Electrical Specifications .................................................................................................................................. 26
Thermal Characteristics .................................................................................................................................. 38
Electrical Specifications – IDD Specifications and Conditions ............................................................................ 40
Electrical Characteristics – IDD Specifications .................................................................................................. 51
Electrical Specifications – DC and AC .............................................................................................................. 52
DC Operating Conditions ........................................................................................................................... 52
Input Operating Conditions ........................................................................................................................ 53
DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 57
DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 61
DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 63
ODT Characteristics ....................................................................................................................................... 64
1.35V ODT Resistors ................................................................................................................................... 65
ODT Sensitivity .......................................................................................................................................... 66
ODT Timing Definitions ............................................................................................................................. 66
Output Driver Impedance ............................................................................................................................... 70
34 Ohm Output Driver Impedance .............................................................................................................. 71
DDR3L 34 Ohm Driver ................................................................................................................................ 72
DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 73
DDR3L Alternative 40 Ohm Driver ............................................................................................................... 74
DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 74
Output Characteristics and Operating Conditions ............................................................................................ 76
Reference Output Load ............................................................................................................................... 79
Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 79
Slew Rate Definitions for Differential Output Signals .................................................................................... 81
Speed Bin Tables ............................................................................................................................................ 82
Electrical Characteristics and AC Operating Conditions ................................................................................... 86
Command and Address Setup, Hold, and Derating .......................................................................................... 104
Data Setup, Hold, and Derating ...................................................................................................................... 111
Commands – Truth Tables ............................................................................................................................. 120
Commands ................................................................................................................................................... 123
DESELECT ................................................................................................................................................ 123
NO OPERATION ........................................................................................................................................ 123
ZQ CALIBRATION LONG ........................................................................................................................... 123
ZQ CALIBRATION SHORT .......................................................................................................................... 123
ACTIVATE ................................................................................................................................................. 123
READ ........................................................................................................................................................ 123
WRITE ...................................................................................................................................................... 124
PRECHARGE ............................................................................................................................................. 125
REFRESH .................................................................................................................................................. 125
SELF REFRESH .......................................................................................................................................... 126
DLL Disable Mode ..................................................................................................................................... 127
Input Clock Frequency Change ...................................................................................................................... 131
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2Gb_DDR3L.pdf - Rev. O 09/18 EN
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
Write Leveling ............................................................................................................................................... 133
Write Leveling Procedure ........................................................................................................................... 135
Write Leveling Mode Exit Procedure ........................................................................................................... 137
Initialization ................................................................................................................................................. 138
Voltage Initialization/Change ........................................................................................................................ 140
VDD Voltage Switching ............................................................................................................................... 141
Mode Registers .............................................................................................................................................. 142
Mode Register 0 (MR0) ................................................................................................................................... 143
Burst Length ............................................................................................................................................. 143
Burst Type ................................................................................................................................................. 144
DLL RESET ................................................................................................................................................ 145
Write Recovery .......................................................................................................................................... 146
Precharge Power-Down (Precharge PD) ...................................................................................................... 146
CAS Latency (CL) ....................................................................................................................................... 146
Mode Register 1 (MR1) ................................................................................................................................... 148
DLL ENABLE/DISABLE .............................................................................................................................. 148
Output Drive Strength ............................................................................................................................... 149
OUTPUT ENABLE/DISABLE ...................................................................................................................... 149
TDQS ENABLE .......................................................................................................................................... 149
On-Die Termination (ODT) ........................................................................................................................ 150
WRITE LEVELING ..................................................................................................................................... 150
Posted CAS Additive Latency (AL) ............................................................................................................... 150
Mode Register 2 (MR2) ................................................................................................................................... 152
CAS WRITE Latency (CWL) ........................................................................................................................ 152
AUTO SELF REFRESH (ASR) ....................................................................................................................... 153
SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 153
SRT versus ASR .......................................................................................................................................... 154
Dynamic On-Die Termination (ODT) ......................................................................................................... 154
Mode Register 3 (MR3) ................................................................................................................................... 155
MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 155
MPR Functional Description ...................................................................................................................... 156
MPR Address Definitions and Bursting Order .............................................................................................. 157
MPR Read Predefined Pattern .................................................................................................................... 162
MODE REGISTER SET (MRS) Command ........................................................................................................ 162
ZQ CALIBRATION Operation ......................................................................................................................... 163
ACTIVATE Operation ..................................................................................................................................... 164
READ Operation ............................................................................................................................................ 166
WRITE Operation .......................................................................................................................................... 177
DQ Input Timing ....................................................................................................................................... 185
PRECHARGE Operation ................................................................................................................................. 187
SELF REFRESH Operation .............................................................................................................................. 187
Extended Temperature Usage ........................................................................................................................ 189
Power-Down Mode ........................................................................................................................................ 190
RESET Operation ........................................................................................................................................... 198
On-Die Termination (ODT) ............................................................................................................................ 200
Functional Representation of ODT ............................................................................................................. 200
Nominal ODT ............................................................................................................................................ 200
Dynamic ODT ............................................................................................................................................... 202
Dynamic ODT Special Use Case ................................................................................................................. 202
Functional Description .............................................................................................................................. 202
Synchronous ODT Mode ................................................................................................................................ 208
ODT Latency and Posted ODT .................................................................................................................... 208
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
Timing Parameters .................................................................................................................................... 208
ODT Off During READs .............................................................................................................................. 211
Asynchronous ODT Mode .............................................................................................................................. 213
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 215
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 217
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 219
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2Gb_DDR3L.pdf - Rev. O 09/18 EN
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
List of Figures
Figure 1: DDR3L Part Numbers ........................................................................................................................ 2
Figure 2: Simplified State Diagram ................................................................................................................. 13
Figure 3: 512 Meg x 4 Functional Block Diagram ............................................................................................. 16
Figure 4: 256 Meg x 8 Functional Block Diagram ............................................................................................. 17
Figure 5: 128 Meg x 16 Functional Block Diagram ........................................................................................... 17
Figure 6: 78-Ball FBGA – x4, x8 Ball Assignments (Top View) ........................................................................... 18
Figure 7: 96-Ball FBGA – x16 Ball Assignments (Top View) ............................................................................... 19
Figure 8: 78-Ball FBGA – x4, x8 (DA) ............................................................................................................... 24
Figure 9: 96-Ball FBGA – x16 (JT) ................................................................................................................... 25
Figure 10: Thermal Measurement Point ......................................................................................................... 39
Figure 11: DDR3L 1.35V Input Signal .............................................................................................................. 56
Figure 12: Overshoot ..................................................................................................................................... 57
Figure 13: Undershoot ................................................................................................................................... 58
Figure 14: V IX for Differential Signals .............................................................................................................. 59
Figure 15: Single-Ended Requirements for Differential Signals ........................................................................ 59
Figure 16: Definition of Differential AC-Swing and tDVAC ............................................................................... 60
Figure 17: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 62
Figure 18: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .............. 63
Figure 19: ODT Levels and I-V Characteristics ................................................................................................ 64
Figure 20: ODT Timing Reference Load .......................................................................................................... 67
Figure 21: tAON and tAOF Definitions ............................................................................................................ 68
Figure 22: tAONPD and tAOFPD Definitions ................................................................................................... 68
Figure 23: tADC Definition ............................................................................................................................. 69
Figure 24: Output Driver ................................................................................................................................ 70
Figure 25: DQ Output Signal .......................................................................................................................... 77
Figure 26: Differential Output Signal .............................................................................................................. 78
Figure 27: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 79
Figure 28: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 80
Figure 29: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 81
Figure 30: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) ............................................. 107
Figure 31: Nominal Slew Rate for tIH (Command and Address – Clock) ........................................................... 108
Figure 32: Tangent Line for tIS (Command and Address – Clock) .................................................................... 109
Figure 33: Tangent Line for tIH (Command and Address – Clock) .................................................................... 110
Figure 34: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) ......................................................................... 116
Figure 35: Nominal Slew Rate for tDH (DQ – Strobe) ...................................................................................... 117
Figure 36: Tangent Line for tDS (DQ – Strobe) ................................................................................................ 118
Figure 37: Tangent Line for tDH (DQ – Strobe) ............................................................................................... 119
Figure 38: Refresh Mode ............................................................................................................................... 126
Figure 39: DLL Enable Mode to DLL Disable Mode ........................................................................................ 128
Figure 40: DLL Disable Mode to DLL Enable Mode ........................................................................................ 129
Figure 41: DLL Disable tDQSCK .................................................................................................................... 130
Figure 42: Change Frequency During Precharge Power-Down ........................................................................ 132
Figure 43: Write Leveling Concept ................................................................................................................. 133
Figure 44: Write Leveling Sequence ............................................................................................................... 136
Figure 45: Write Leveling Exit Procedure ....................................................................................................... 137
Figure 46: Initialization Sequence ................................................................................................................. 139
Figure 47: V DD Voltage Switching .................................................................................................................. 141
Figure 48: MRS to MRS Command Timing ( tMRD) ......................................................................................... 142
Figure 49: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 143
Figure 50: Mode Register 0 (MR0) Definitions ................................................................................................ 144
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
Figure 51: READ Latency .............................................................................................................................. 147
Figure 52: Mode Register 1 (MR1) Definition ................................................................................................. 148
Figure 53: READ Latency (AL = 5, CL = 6) ....................................................................................................... 151
Figure 54: Mode Register 2 (MR2) Definition ................................................................................................. 152
Figure 55: CAS WRITE Latency ...................................................................................................................... 153
Figure 56: Mode Register 3 (MR3) Definition ................................................................................................. 155
Figure 57: MPR Block Diagram ...................................................................................................................... 156
Figure 58: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 158
Figure 59: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 159
Figure 60: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 160
Figure 61: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 161
Figure 62: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 163
Figure 63: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 164
Figure 64: Example: tFAW ............................................................................................................................. 165
Figure 65: READ Latency .............................................................................................................................. 166
Figure 66: Consecutive READ Bursts (BL8) .................................................................................................... 168
Figure 67: Consecutive READ Bursts (BC4) .................................................................................................... 168
Figure 68: Nonconsecutive READ Bursts ....................................................................................................... 169
Figure 69: READ (BL8) to WRITE (BL8) .......................................................................................................... 169
Figure 70: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 170
Figure 71: READ to PRECHARGE (BL8) .......................................................................................................... 170
Figure 72: READ to PRECHARGE (BC4) ......................................................................................................... 171
Figure 73: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 171
Figure 74: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 171
Figure 75: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 173
Figure 76: Data Strobe Timing – READs ......................................................................................................... 174
Figure 77: Method for Calculating tLZ and tHZ ............................................................................................... 175
Figure 78: tRPRE Timing ............................................................................................................................... 175
Figure 79: tRPST Timing ............................................................................................................................... 176
Figure 80: tWPRE Timing .............................................................................................................................. 178
Figure 81: tWPST Timing .............................................................................................................................. 178
Figure 82: WRITE Burst ................................................................................................................................ 179
Figure 83: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 180
Figure 84: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 180
Figure 85: Nonconsecutive WRITE to WRITE ................................................................................................. 181
Figure 86: WRITE (BL8) to READ (BL8) .......................................................................................................... 181
Figure 87: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 182
Figure 88: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 183
Figure 89: WRITE (BL8) to PRECHARGE ........................................................................................................ 184
Figure 90: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 184
Figure 91: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 185
Figure 92: Data Input Timing ........................................................................................................................ 186
Figure 93: Self Refresh Entry/Exit Timing ...................................................................................................... 188
Figure 94: Active Power-Down Entry and Exit ................................................................................................ 192
Figure 95: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 192
Figure 96: Precharge Power-Down (Slow-Exit Mode) Entry and Exit ................................................................ 193
Figure 97: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ............................................. 193
Figure 98: Power-Down Entry After WRITE .................................................................................................... 194
Figure 99: Power-Down Entry After WRITE with Auto Precharge (WRAP) ........................................................ 194
Figure 100: REFRESH to Power-Down Entry .................................................................................................. 195
Figure 101: ACTIVATE to Power-Down Entry ................................................................................................. 195
Figure 102: PRECHARGE to Power-Down Entry ............................................................................................. 196
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2Gb_DDR3L.pdf - Rev. O 09/18 EN
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
Figure 103:
Figure 104:
Figure 105:
Figure 106:
Figure 107:
Figure 108:
Figure 109:
Figure 110:
Figure 111:
Figure 112:
Figure 113:
Figure 114:
Figure 115:
Figure 116:
Figure 117:
Figure 118:
Figure 119:
MRS Command to Power-Down Entry ......................................................................................... 196
Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 197
RESET Sequence ......................................................................................................................... 199
On-Die Termination ................................................................................................................... 200
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 205
Dynamic ODT: Without WRITE Command .................................................................................. 205
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 206
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 207
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 207
Synchronous ODT ...................................................................................................................... 209
Synchronous ODT (BC4) ............................................................................................................. 210
ODT During READs .................................................................................................................... 212
Asynchronous ODT Timing with Fast ODT Transition .................................................................. 214
Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 216
Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 218
Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 220
Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 220
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2Gb_DDR3L.pdf - Rev. O 09/18 EN
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
List of Tables
Table 1: Key Timing Parameters ....................................................................................................................... 1
Table 2: Addressing ......................................................................................................................................... 2
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions .............................................................................................. 20
Table 4: 96-Ball FBGA – x16 Ball Descriptions ................................................................................................. 22
Table 5: Input/Output Capacitance ................................................................................................................ 26
Table 6: DC Electrical Characteristics and Operating Conditions – 1.35V Operation ......................................... 26
Table 7: DC Electrical Characteristics and Operating Conditions – 1.5V Operation ........................................... 26
Table 8: Input Switching Conditions – Command and Address ........................................................................ 27
Table 9: Input Switching Conditions – DQ and DM ......................................................................................... 27
Table 10: Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .................................................. 28
Table 11: Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ...................... 28
Table 12: RTT Effective Impedance ................................................................................................................. 29
Table 13: Reference Settings for ODT Timing Measurements ........................................................................... 30
Table 14: 34Ω Driver Impedance Characteristics ............................................................................................. 30
Table 15: 40Ω Driver Impedance Characteristics ............................................................................................. 30
Table 16: Single-Ended Output Driver Characteristics ..................................................................................... 31
Table 17: Differential Output Driver Characteristics ........................................................................................ 31
Table 18: Electrical Characteristics and AC Operating Conditions .................................................................... 31
Table 19: Derating Values for tIS/tIH – AC160/DC90-Based .............................................................................. 32
Table 20: Derating Values for tIS/tIH – AC135/DC90-Based .............................................................................. 33
Table 21: Derating Values for tIS/tIH – AC125/DC90-Based .............................................................................. 33
Table 22: Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition .............. 34
Table 23: Derating Values for tDS/tDH – AC160/DC90-Based ........................................................................... 34
Table 24: Derating Values for tDS/tDH – AC135/DC90-Based ........................................................................... 35
Table 25: Derating Values for tDS/tDH – AC130/DC100-Based at 2V/ns ............................................................ 36
Table 26: Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition .......................... 37
Table 27: Thermal Characteristics .................................................................................................................. 38
Table 28: Thermal Impedance ........................................................................................................................ 39
Table 29: DDR3L Timing Parameters Used for I DD Measurements – Clock Units ............................................... 40
Table 30: DDR3L IDD0 Measurement Loop ...................................................................................................... 41
Table 31: DDR3L IDD1 Measurement Loop ...................................................................................................... 42
Table 32: DDR3L IDD Measurement Conditions for Power-Down Currents ....................................................... 43
Table 33: DDR3L IDD2N and IDD3N Measurement Loop .................................................................................... 44
Table 34: DDR3L IDD2NT Measurement Loop .................................................................................................. 44
Table 35: DDR3L IDD4R Measurement Loop .................................................................................................... 45
Table 36: DDR3L IDD4W Measurement Loop .................................................................................................... 46
Table 37: DDR3L IDD5B Measurement Loop .................................................................................................... 47
Table 38: DDR3L IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 ........................................................ 48
Table 39: DDR3L IDD7 Measurement Loop ...................................................................................................... 49
Table 40: IDD Maximum Limits – Die Rev. K .................................................................................................... 51
Table 41: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions .............................................. 52
Table 42: DDR3L 1.35V DC Electrical Characteristics and Input Conditions ..................................................... 53
Table 43: DDR3L 1.35V Input Switching Conditions - Command and Address .................................................. 54
Table 44: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .............................. 55
Table 45: DDR3L Control and Address Pins ..................................................................................................... 57
Table 46: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins ............................................................................. 57
Table 47: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ...
60
Table 48: Single-Ended Input Slew Rate Definition .......................................................................................... 61
Table 49: DDR3L 1.35V Differential Input Slew Rate Definition ........................................................................ 63
Table 50: On-Die Termination DC Electrical Characteristics ............................................................................ 64
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
Table 51: 1.35V RTT Effective Impedance ........................................................................................................ 65
Table 52: ODT Sensitivity Definition .............................................................................................................. 66
Table 53: ODT Temperature and Voltage Sensitivity ........................................................................................ 66
Table 54: ODT Timing Definitions .................................................................................................................. 67
Table 55: DDR3L(1.35V) Reference Settings for ODT Timing Measurements .................................................... 67
Table 56: DDR3L 34 Ohm Driver Impedance Characteristics ........................................................................... 71
Table 57: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ........................................... 72
Table 58: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.35V ..................................... 72
Table 59: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.45V ..................................... 72
Table 60: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.283 ..................................... 73
Table 61: DDR3L 34 Ohm Output Driver Sensitivity Definition ........................................................................ 73
Table 62: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity .................................................. 73
Table 63: DDR3L 40 Ohm Driver Impedance Characteristics ........................................................................... 74
Table 64: DDR3L 40 Ohm Output Driver Sensitivity Definition ........................................................................ 74
Table 65: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 75
Table 66: DDR3L Single-Ended Output Driver Characteristics ......................................................................... 76
Table 67: DDR3L Differential Output Driver Characteristics ............................................................................ 77
Table 68: DDR3L Differential Output Driver Characteristics V OX(AC) ................................................................. 78
Table 69: Single-Ended Output Slew Rate Definition ....................................................................................... 79
Table 70: Differential Output Slew Rate Definition .......................................................................................... 81
Table 71: DDR3L-1066 Speed Bins .................................................................................................................. 82
Table 72: DDR3L-1333 Speed Bins .................................................................................................................. 83
Table 73: DDR3L-1600 Speed Bins .................................................................................................................. 84
Table 74: DDR3L-1866 Speed Bins .................................................................................................................. 85
Table 75: Electrical Characteristics and AC Operating Conditions .................................................................... 86
Table 76: Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 96
Table 77: DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based ............... 105
Table 78: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC160/DC90-Based ................................ 105
Table 79: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based ................................ 105
Table 80: DDR3L-1866 Derating Values for tIS/tIH – AC125/DC90-Based ........................................................ 106
Table 81: DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition . 106
Table 82: DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ....................... 112
Table 83: DDR3L Derating Values for tDS/tDH – AC160/DC90-Based .............................................................. 112
Table 84: DDR3L Derating Values for tDS/tDH – AC135/DC100-Based ............................................................ 112
Table 85: DDR3L Derating Values for tDS/tDH – AC130/DC100-Based at 2V/ns ............................................... 114
Table 86: DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ............. 115
Table 87: Truth Table – Command ................................................................................................................. 120
Table 88: Truth Table – CKE .......................................................................................................................... 122
Table 89: READ Command Summary ............................................................................................................ 124
Table 90: WRITE Command Summary .......................................................................................................... 124
Table 91: READ Electrical Characteristics, DLL Disable Mode ......................................................................... 130
Table 92: Write Leveling Matrix ..................................................................................................................... 134
Table 93: Burst Order .................................................................................................................................... 145
Table 94: MPR Functional Description of MR3 Bits ........................................................................................ 156
Table 95: MPR Readouts and Burst Order Bit Mapping ................................................................................... 157
Table 96: Self Refresh Temperature and Auto Self Refresh Description ............................................................ 189
Table 97: Self Refresh Mode Summary ........................................................................................................... 189
Table 98: Command to Power-Down Entry Parameters .................................................................................. 190
Table 99: Power-Down Modes ....................................................................................................................... 191
Table 100: Truth Table – ODT (Nominal) ........................................................................................................ 201
Table 101: ODT Parameters .......................................................................................................................... 201
Table 102: Write Leveling with Dynamic ODT Special Case ............................................................................. 202
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2Gb: x4, x8, x16 DDR3L SDRAM
Description
Table 103:
Table 104:
Table 105:
Table 106:
Table 107:
Table 108:
Table 109:
Dynamic ODT Specific Parameters ............................................................................................... 203
Mode Registers for RTT,nom ............................................................................................................ 203
Mode Registers for RTT(WR) ............................................................................................................ 204
Timing Diagrams for Dynamic ODT .............................................................................................. 204
Synchronous ODT Parameters ...................................................................................................... 209
Asynchronous ODT Timing Parameters for All Speed Bins .............................................................. 214
ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................. 216
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2Gb: x4, x8, x16 DDR3L SDRAM
Important Notes and Warnings
Important Notes and Warnings
Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized
by Micron.
Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.
Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage
("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the
Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron
component for any critical application, customer and distributor shall indemnify and hold harmless Micron and
its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the
Micron product.
Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included
in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component.
Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,
breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly
authorized representative.
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2Gb_DDR3L.pdf - Rev. O 09/18 EN
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2Gb: x4, x8, x16 DDR3L SDRAM
State Diagram
State Diagram
Figure 2: Simplified State Diagram
CKE L
Power
applied
Power
on
MRS, MPR,
write
leveling
Initialization
Reset
procedure
SRE
ZQCL
From any
state
RESET
ZQ
calibration
Self
refresh
MRS
SRX
REF
ZQCL/ZQCS
Refreshing
Idle
PDE
ACT
PDX
Active
powerdown
Precharge
powerdown
Activating
PDX
CKE L
CKE L
PDE
Bank
active
WRITE
WRITE
READ
WRITE AP
Writing
READ
READ AP
READ
WRITE
WRITE AP
Reading
READ AP
WRITE AP
READ AP
PRE, PREA
Writing
PRE, PREA
PRE, PREA
Precharging
Reading
Automatic
sequence
Command
sequence
ACT = ACTIVATE
MPR = Multipurpose register
MRS = Mode register set
PDE = Power-down entry
PDX = Power-down exit
PRE = PRECHARGE
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PREA = PRECHARGE ALL
READ = RD, RDS4, RDS8
READ AP = RDAP, RDAPS4, RDAPS8
REF = REFRESH
RESET = START RESET PROCEDURE
SRE = Self refresh entry
13
SRX = Self refresh exit
WRITE = WR, WRS4, WRS8
WRITE AP = WRAP, WRAPS4, WRAPS8
ZQCL = ZQ LONG CALIBRATION
ZQCS = ZQ SHORT CALIBRATION
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2Gb: x4, x8, x16 DDR3L SDRAM
Functional Description
Functional Description
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation.
The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write
operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK
going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble.
Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an ACTIVATE command, which is then
followed by a READ or WRITE command. The address bits registered coincident with
the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select
the bank and the starting column location for the burst access.
The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be
enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM
allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.
Industrial Temperature
The industrial temperature (IT) device requires that the case temperature not exceed
–40°C or 95°C. JEDEC specifications require the refresh rate to double when T C exceeds
85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when T C is < 0°C or
>95°C.
General Notes
• The functionality and the timing specifications discussed in this data sheet are for the
DLL enable mode of operation (normal operation).
• Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be
interpreted as any and all DQ collectively, unless specifically stated otherwise.
• The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as
DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise.
CCMTD-1725822587-7895
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2Gb: x4, x8, x16 DDR3L SDRAM
Functional Description
• Complete functionality may be described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements.
• Any specific requirement takes precedence over a general statement.
• Any functionality not specifically stated is considered undefined, illegal, and not supported, and can result in unknown operation.
• Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4,
x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4,
x8).
• Dynamic ODT has a special use case: when DDR3 devices are architected for use in a
single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer
to the Dynamic ODT Special Use Case section.
• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be
used, use the lower byte for data transfers and terminate the upper byte as noted:
–
–
–
–
Connect UDQS to ground via 1kΩ* resistor.
Connect UDQS# to V DD via 1kΩ* resistor.
Connect UDM to V DD via 1kΩ* resistor.
Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1kΩ resistors,* or float
DQ[15:8].
*If ODT is used, 1kΩ resistor should be changed to 4x that of the selected ODT.
CCMTD-1725822587-7895
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2Gb: x4, x8, x16 DDR3L SDRAM
Functional Block Diagrams
Functional Block Diagrams
DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally
configured as an 8-bank DRAM.
Figure 3: 512 Meg x 4 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
ZQ CAL
RESET#
ZQCL, ZQCS
CKE
VSSQ
To pullup/pulldown
networks
Control
logic
A12
CK, CK#
VDDQ/2
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
18
15
Rowaddress
MUX
15
15
Bank 0
rowaddress
32,768
latch
and
decoder
Columns 0, 1, and 2
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
RTT,nom
CK,CK#
DLL
Bank 0
memory
array
(32,768 x 256 x 32)
32
READ
FIFO
and
data
MUX
4
(1 . . . 4)
DQ[3:0]
READ
drivers
VDDQ/2
32
8,192
BC4
BC4
OTF
I/O gating
DM mask logic
3
18
Address
register
3
Bank
control
logic
(1, 2)
32
Data
interface
4
Data
WRITE
drivers
and
input
logic
8
DQS, DQS#
VDDQ/2
RTT,nom
SW1
RTT(WR)
SW2
DM
3
Columns 0, 1, and 2
CK,CK#
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RTT(WR)
SW2
SW1
Column
decoder
Columnaddress
counter/
latch
RTT,nom
DM
256
(x32)
11
DQ[3:0]
DQS, DQS#
Sense amplifiers
A[14:0]
BA[2:0]
RTT(WR)
SW2
SW1
16
Column 2
(select upper or
lower nibble for BC4)
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Functional Block Diagrams
Figure 4: 256 Meg x 8 Functional Block Diagram
ODT
control
ODT
ZQ
RESET#
RZQ
Control
logic
CKE
VSSQ
To ODT/output drivers
ZQ CAL
A12
ZQCL, ZQCS
CK, CK#
VDDQ/2
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
15
Rowaddress
MUX
18
15
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
Bank
control
logic
3
(1 . . . 8)
8
DQ[7:0]
DQS, DQS#
VDDQ/2
BC4
BC4
OTF
RTT,nom
SW1
RTT(WR)
SW2
(1, 2)
(128
x64)
64
8
Data
interface
Data
Column
decoder
Columnaddress
counter/
latch
10
TDQS#
DQ[7:0]
Read
drivers
I/O gating
DM mask logic
3
Address
register
SW2
DQ8
READ
FIFO
and
data
MUX
64
8,192
18
CK, CK#
DLL
64
Sense amplifiers
A[14:0]
BA[2:0]
RTT(WR)
RTT,nom
SW1
Bank 0
Memory
array
(32,768 x 128 x 64)
Bank 0
rowaddress
32,768
latch
and
decoder
15
Columns 0, 1, and 2
VDDQ/2
Write
drivers
and
input
logic
RTT,nom
SW1
RTT(WR)
SW2
7
3
DQS/DQS#
DM/TDQS
(shared pin)
Columns 0, 1, and 2
CK, CK#
Column 2
(select upper or
lower nibble for BC4)
Figure 5: 128 Meg x 16 Functional Block Diagram
ODT
control
ODT
ZQ
RZQ
ZQ CAL
RESET#
Control
logic
CKE
VSSQ
To ODT/output drivers
ZQCL, ZQCS
A12
CK, CK#
VDDQ/2
BC4 (burst chop)
Command
decode
CS#
RAS#
CAS#
WE#
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
OTF
Mode registers
Refresh
counter
17
13
Rowaddress
MUX
14
14
Bank 0
rowaddress
latch
and
decoder
16,384
RTT,nom
Column 0, 1, and 2
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
CK, CK#
DLL
(1 . . . 16)
Bank 0
memory
array
(16,384 x 128 x 128)
128
READ
FIFO
and
data
MUX
16
DQ[15:0]
READ
drivers
LDQS, LDQS#, UDQS, UDQS#
A[13:0]
BA[2:0]
17
Address
register
3
BC4
128
16,384
Data
interface
16
Data
WRITE
drivers
and
input
logic
7
3
UDQS, UDQS#
VDDQ/2
128
RTT,nom
SW1
RTT(WR)
SW2
(1, 2)
LDM/UDM
Columns 0, 1, and 2
CK, CK#
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SW2
LDQS, LDQS#
Column
decoder
10
RTT(WR)
(1 . . . 4)
(128
x128)
Columnaddress
counter/
latch
RTT,nom
SW1
BC4
OTF
I/O gating
DM mask logic
Bank
control
logic
DQ[15:0]
VDDQ/2
Sense amplifiers
3
RTT(WR)
SW2
SW1
17
Column 2
(select upper or
lower nibble for BC4)
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Ball Assignments and Descriptions
Figure 6: 78-Ball FBGA – x4, x8 Ball Assignments (Top View)
1
2
3
VSS
VDD
VSS
VDDQ
4
5
6
7
8
9
NC
NF, NF/TDQS#
VSS
VDD
VSSQ
DQ0
DM, DM/TDQS
VSSQ
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
NF, DQ6 DQS#
VDD
VSS
VSSQ
A
B
C
D
VSSQ
E
VREFDQ
NF, DQ7 NF, DQ5
VDDQ NF, DQ4
VDDQ
F
NC
VSS
RAS#
CK
VSS
NC
ODT
VDD
CAS#
CK#
VDD
CKE
NC
CS#
WE#
A10/AP
ZQ
NC
VSS
BA0
BA2
NC
VREFCA
VSS
VDD
A3
A0
A12/BC#
BA1
VDD
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS
RESET#
A13
A14
A8
VSS
G
H
J
K
L
M
N
Notes:
CCMTD-1725822587-7895
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1. Ball descriptions listed in Table 3 (page 20) are listed as “x4, x8” if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example: D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies
to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are defined in Table 3).
18
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2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Figure 7: 96-Ball FBGA – x16 Ball Assignments (Top View)
A
B
1
2
3
VDDQ
DQ13
VSSQ
4
5
6
7
8
9
DQ15
DQ12
VDDQ
VSS
VDD
VSS
UDQS#
DQ14
VSSQ
VDDQ
DQ11
DQ9
UDQS
DQ10
VDDQ
VSSQ
VDDQ
UDM
DQ8
VSSQ
VDD
VSS
VSSQ
DQ0
LDM
VSSQ
VDDQ
VDDQ
DQ2
LDQS
DQ1
DQ3
VSSQ
VSSQ
DQ6
LDQS#
VDD
VSS
VSSQ
VREFDQ
VDDQ
DQ4
DQ7
DQ5
VDDQ
NC
VSS
RAS#
CK
VSS
NC
ODT
VDD
CAS#
CK#
VDD
CKE
NC
CS#
WE#
A10/AP
ZQ
NC
VSS
BA0
BA2
NC
VREFCA
VSS
VDD
A3
A0
A12/BC#
BA1
VDD
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS
RESET#
A13
NC
A8
VSS
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Notes:
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
1. Ball descriptions listed in Table 4 (page 22) are listed as “x16.”
2. A comma separates the configuration; a slash defines a selectable function.
19
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions
Symbol
Type
Description
A[14:13],
A12/BC#, A11,
A10/AP,
A[9:0]
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out
of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected
by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a
LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled
in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop,
LOW = BC4 burst chop). See Truth Table - Command.
BA[2:0]
Input
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or
PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to
VREFCA.
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE
Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE power-down and SELF REFRESH operations (all banks idle) or active
power-down (row active in any bank). CKE is synchronous for power-down entry and exit
and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to
VREFCA.
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command
code. CS# is referenced to VREFCA.
DM
Input
Input data mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH along with the input data during a write access. Although the DM
ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM
is referenced to VREFDQ. DM has an optional use as TDQS on the x8 device.
ODT
Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the
x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the
LOAD MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being
entered and are referenced to VREFCA.
RESET#
Input
Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver
is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDDQ and DC LOW ≤
0.2 × VDDQ. RESET# assertion and deassertion are asynchronous.
DQ[3:0]
I/O
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ.
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued)
Symbol
Type
DQ[7:0]
I/O
Description
Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ.
DQS, DQS#
I/O
Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data.
TDQS, TDQS#
I/O
Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled,
DM is disabled, and the TDQS and TDQS# balls provide termination resistance.
VDD
Supply
Power supply: 1.35V, 1.283–1.45V operational; compatible to 1.5V operation.
VDDQ
Supply
DQ power supply: 1.35V, 1.283–1.45V operational; compatible with 1.5V operation.
VREFCA
Supply
Reference voltage for control, command, and address: VREFCA must be maintained
at all times (including self refresh) for proper device operation.
VREFDQ
Supply
Reference voltage for data: VREFDQ must be maintained at all times (including self refresh) for proper device operation.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground: Isolated on the device for improved noise immunity.
ZQ
Reference External reference ball for output drive calibration: This ball is tied to an external
240Ω resistor (RZQ), which is tied to VSSQ.
NC
–
No connect: These balls should be left unconnected (the ball has no connection to the
DRAM or to other balls).
NF
–
No function: When configured as a x4 device, these balls are NF. When configured as a
x8 device, these balls are defined as TDQS#, DQ[7:4].
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Table 4: 96-Ball FBGA – x16 Ball Descriptions
Symbol
Type
Description
A13, A12/BC#,
A11, A10/AP,
A[9:0]
Input
Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out
of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected
by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a
LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled
in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop,
LOW = BC4 burst chop). See Truth Table - Command.
BA[2:0]
Input
Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or
PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to
VREFCA.
CK, CK#
Input
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (LDQS, LDQS#, UDQS, UDQS#) is referenced to the crossings of CK and
CK#.
CKE
Input
Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE power-down and SELF REFRESH operations (all banks idle) or active
power-down (row active in any bank). CKE is synchronous for power-down entry and exit
and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to
VREFCA.
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command
code. CS# is referenced to VREFCA.
LDM
Input
Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte input data is masked when LDM is sampled HIGH along with the input data during a write
access. Although the LDM ball is input-only, the LDM loading is designed to match that
of the DQ and LDQS balls. LDM is referenced to VREFDQ.
ODT
Input
On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS,
UDQS#, LDM, and UDM for the x16. The ODT input is ignored if disabled via the LOAD
MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE#
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being
entered and are referenced to VREFCA.
RESET#
Input
Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver
is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDDQ and DC LOW ≤
0.2 × VDDQ. RESET# assertion and deassertion are asynchronous.
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
22
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued)
Symbol
Type
Description
UDM
Input
Input data mask: UDM is an upper-byte, input mask signal for write data. Upper-byte
input data is masked when UDM is sampled HIGH along with the input data during a
write access. Although the UDM ball is input-only, the UDM loading is designed to match
that of the DQ and UDQS balls. UDM is referenced to VREFDQ.
DQ[7:0]
I/O
Data input/output: Lower byte of bidirectional data bus for the x16 configuration.
DQ[7:0] are referenced to VREFDQ.
DQ[15:8]
I/O
Data input/output: Upper byte of bidirectional data bus for the x16 configuration.
DQ[15:8] are referenced to VREFDQ.
LDQS, LDQS#
I/O
Lower byte data strobe: Output with read data. Edge-aligned with read data. Input
with write data. LDQS is center-aligned to write data.
UDQS, UDQS#
I/O
Upper byte data strobe: Output with read data. Edge-aligned with read data. Input
with write data. UDQS is center-aligned to write data.
VDD
Supply
Power supply: 1.35V, 1.283–1.45V operational; compatible to 1.5V operation.
VDDQ
Supply
DQ power supply: 1.35V, 1.283–1.45V operational; compatible with 1.5V operation.
VREFCA
Supply
Reference voltage for control, command, and address: VREFCA must be maintained
at all times (including self refresh) for proper device operation.
VREFDQ
Supply
Reference voltage for data: VREFDQ must be maintained at all times (including self refresh) for proper device operation.
VSS
Supply
Ground.
VSSQ
Supply
DQ ground: Isolated on the device for improved noise immunity.
ZQ
NC
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
Reference External reference ball for output drive calibration: This ball is tied to an external
240Ω resistor (RZQ), which is tied to VSSQ.
–
No connect: These balls should be left unconnected (the ball has no connection to the
DRAM or to other balls).
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
Package Dimensions
Figure 8: 78-Ball FBGA – x4, x8 (DA)
0.155
Seating plane
78X Ø0.45
Dimensions apply
to solder balls postreflow on Ø0.35 SMD
ball pads.
1.8 CTR
Nonconductive
overmold
0.12 A
A
Ball A1 ID
9 8 7
Ball A1 ID
3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
10.5 ±0.1
9.6 CTR
0.8 TYP
1.1 ±0.1
0.8 TYP
6.4 CTR
0.25 MIN
8 ±0.1
Notes:
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
24
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
Figure 9: 96-Ball FBGA – x16 (JT)
0.155
Seating plane
A
1.8 CTR
Nonconductive
overmold
96X Ø0.45
Dimensions apply
to solder balls postreflow on Ø0.35
SMD ball pads.
0.12 A
Ball A1 ID
9
8
7
3
2
Ball A1 ID
1
A
B
C
D
E
F
14 ±0.1
G
H
12 CTR
J
K
L
M
N
P
R
0.8 TYP
T
1.1 ±0.1
0.8 TYP
6.4 CTR
0.25 MIN
8 ±0.1
Notes:
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
25
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications
Electrical Specifications
Table 5: Input/Output Capacitance
Capacitance
Parameters
Symbol
DDR3L-800
DDR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Single-end I/O: DQ, DM
CIO
1.5
2.5
1.5
2.5
1.5
2.3
1.5
2.2
1.5
2.1
pF
Differential I/O: DQS,
DQS#, TDQS, TDQS#
CIO
1.5
2.5
1.5
2.5
1.5
2.3
1.5
2.2
1.5
2.1
pF
Inputs (CTRL,
CMD,ADDR)
CI
0.75
1.3
0.75
1.3
0.75
1.3
0.75
1.2
0.75
1.2
pF
Table 6: DC Electrical Characteristics and Operating Conditions – 1.35V Operation
All voltages are referenced to VSS
Parameter/Condition
Symbol
Min
Nom
Max
Units
Notes
Supply voltage
VDD
1.283
1.35
1.45
V
1, 2, 3, 4
I/O supply voltage
VDDQ
1.283
1.35
1.45
V
1, 2, 3, 4
Notes:
1. Maximum DC value may not be greater than 1.425V. The DC value is the linear average
of VDD/VDDQ(t) over a very long period of time (for example, 1 sec).
2. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
3. Under these supply voltages, the device operates to this DDR3L specification.
4. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3 operation (see Figure 47 (page 141)).
Table 7: DC Electrical Characteristics and Operating Conditions – 1.5V Operation
All voltages are referenced to VSS
Parameter/Condition
Symbol
Min
Nom
Max
Units
Notes
Supply voltage
VDD
1.425
1.5
1.575
V
1, 2, 3
I/O supply voltage
VDDQ
1.425
1.5
1.575
V
1, 2, 3
Notes:
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
1. If the minimum limit is exceeded, input levels shall be governed by DDR3L specifications.
2. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifications under the same speed timings as defined for this device.
3. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3L operation (see Figure 47 (page
141)).
26
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications
Table 8: Input Switching Conditions – Command and Address
Parameter/Condition
Input high AC voltage: Logic 1
Symbol
VIH(AC160)min
DDR3L-800/1066
DDR3L-1333/1600
DDR3L-1866
Units
1
160
160
–
mV
1
Input high AC voltage: Logic 1
VIH(AC135)min
135
135
135
mV
Input high AC voltage: Logic 1
VIH(AC125)min1
–
–
125
mV
Input high DC voltage: Logic 1
VIH(DC90)min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90)min
–90
–90
–90
mV
1
Input low AC voltage: Logic 0
VIL(AC125)min
–
–
–125
mV
Input low AC voltage: Logic 0
VIL(AC135)min1
–135
–135
–135
mV
Input low AC voltage: Logic 0
1
–160
–160
–
mV
Note:
VIL(AC160)min
1. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3L-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDRL-800, the address/
command inputs must use either VIH(AC160),min with tIS(AC160) of 215ps or VIH(AC135),min
with tIS(AC135) of 365ps; independently, the data inputs may use either VIH(AC160),min or
VIH(AC135),min.
Table 9: Input Switching Conditions – DQ and DM
Parameter/Condition
DDR3L-800/1066
DDR3L-1333/1600
Input high AC voltage: Logic 1
VIH(AC160)min
1
DDR3L-1866
Units
160
Input high AC voltage: Logic 1
VIH(AC135)min1
135
160
–
mV
135
135
Input high AC voltage: Logic 1
VIH(AC130)min
1
mV
–
–
130
mV
Input high DC voltage: Logic 1
VIH(DC90)min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90)min
–90
–90
–90
mV
Input low AC voltage: Logic 0
VIL(AC130)min1
–
–
–130
mV
Input low AC voltage: Logic 0
VIL(AC135)min1
–135
–135
–135
mV
Input low AC voltage: Logic 0
1
–160
–160
–
mV
Note:
Symbol
VIL(AC160)min
1. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3L-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDRL-800, the data inputs must use either VIH(AC160),min with tIS(AC160) of 90ps or VIH(AC135),min with tIS(AC135)
of 140ps; independently, the address/command inputs may use either VIH(AC160),min or
VIH(AC135),min.
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
27
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications
Table 10: Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
Parameter/Condition
Symbol
Min
Max
Units
Differential input logic high – slew
VIH,diff(AC)slew
180
N/A
mV
Differential input logic low – slew
VIL,diff(AC)slew
N/A
–180
mV
Differential input logic high
VIH,diff(AC)
2 × (VIH(AC) - VREF)
VDD/VDDQ
mV
Differential input logic low
VIL,diff(AC)
VSS/VSSQ
2 × (VIL(AC) - VREF)
mV
VSEH
VDDQ/2 + 160
VDDQ
mV
Single-ended high level for strobes
Single-ended high level for CK, CK#
Single-ended low level for strobes
VSEL
Single-ended low level for CK, CK#
VDD/2 + 160
VDD
mV
VSSQ
VDDQ/2 - 160
mV
VSS
VDD/2 - 160
mV
Table 11: Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback
DDR3L-800/1066/1333/1600
tDVAC
tDVAC
DDR3L-1866
tDVAC
tDVAC
tDVAC
Slew Rate (V/ns)
at
320mV (ps)
at
270mV (ps)
at
270mV (ps)
at
250mV (ps)
at
260mV (ps)
>4.0
189
201
163
168
176
4.0
189
201
163
168
176
3.0
162
179
140
147
154
2.0
109
134
95
105
111
1.8
91
119
80
91
97
1.6
69
100
62
74
78
1.4
40
76
37
52
55
1.2
Note1
44
5
22
24
1.0
Note1
Note1
Note1
Note1
Note1
2.0
200
213
200
205
2.0
200
213
200
205
1.5
173
190
178
184
1.0
120
145
133
143
0.9
102
130
118
129
0.8
80
111
99
111
0.7
51
87
75
89
0.6
13
55
43
59
0.5
Note 1
10
Note 1
18
2.0
165
113
95
2.0
165
113
95
1.5
138
90
73
1.0
85
45
30
0.9
67
30
16
0.8
45
11
Note1
0.7
16
Note1
–
0.6
Note1
Note1
–
0.5
Note1
Note1
–
85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
CCMTD-1725822587-7895
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51
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Electrical Specifications – DC and AC
DC Operating Conditions
Table 41: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions
All voltages are referenced to VSS
Parameter/Condition
Symbol
Min
Nom
Max
Unit
Notes
Supply voltage
VDD
1.283
1.35
1.45
V
1–7
I/O supply voltage
VDDQ
1.283
1.35
1.45
V
1–7
II
–2
–
2
µA
IVREF
–1
–
1
µA
Input leakage current
Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.1V
(All other pins not under test = 0V)
VREF supply leakage current
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)
Notes:
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
8, 9
1. VDD and VDDQ must track one another. VDDQ must be ≤ VDD. VSS = VSSQ.
2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the
DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC
timing parameters.
3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average
of VDD/VDDQ(t) over a very long period of time (for example, 1 second).
4. Under these supply voltages, the device operates to this DDR3L specification.
5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifications under the same speed timings as defined for this device.
7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3 operation (see VDD Voltage Switching (page 141)).
8. The minimum limit requirement is for testing purposes. The leakage current on the VREF
pin should be minimal.
9. VREF (see Table 42).
52
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Input Operating Conditions
Table 42: DDR3L 1.35V DC Electrical Characteristics and Input Conditions
All voltages are referenced to VSS
Parameter/Condition
Symbol
Min
Nom
Max
Unit
VIN low; DC/commands/address busses
VIL
VSS
N/A
See Table 43
V
VIN high; DC/commands/address busses
VIH
See Table 43
N/A
VDD
V
Notes
Input reference voltage command/address bus
VREFCA(DC)
0.49 × VDD
0.5 × VDD
0.51 × VDD
V
1, 2
I/O reference voltage DQ bus
VREFDQ(DC)
0.49 × VDD
0.5 × VDD
0.51 × VDD
V
2, 3
I/O reference voltage DQ bus in SELF REFRESH
VREFDQ(SR)
VSS
0.5 × VDD
VDD
V
4
VTT
–
0.5 × VDDQ
–
V
5
Command/address termination voltage
(system level, not direct DRAM input)
Notes:
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFCA may not exceed
±1% × VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed ±2% of VREFCA(DC).
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency.
3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFDQ may not exceed
±1% × VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed ±2% of VREFDQ(DC).
4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH,
within restrictions outlined in the SELF REFRESH section.
5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and maximum values are system-dependent.
53
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2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Table 43: DDR3L 1.35V Input Switching Conditions - Command and Address
Parameter/Condition
Symbol
DDR3L-800/1066
DDR3L-1333/1600
DDR3L-1866
Units
Command and Address
VIH(AC160),min
5
160
160
–
mV
VIH(AC135),min5
135
135
135
mV
VIH(AC125,)min
–
–
125
mV
VIH(DC90),min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90),min
–90
–90
–90
mV
Input low AC voltage: Logic 0
VIL(AC125),min5
–
–
–125
mV
5
–135
–135
–135
mV
5
–160
–160
–
mV
Input high AC voltage: Logic 1
5
Input high DC voltage: Logic 1
VIL(AC135),min
VIL(AC160),min
DQ and DM
Input high AC voltage: Logic 1
VIH(AC160),min5
160
160
–
mV
5
135
135
135
mV
5
–
–
130
mV
VIH(AC135),min
VIH(AC125),min
Input high DC voltage: Logic 1
VIH(DC90),min
90
90
90
mV
Input low DC voltage: Logic 0
VIL(DC90),min
–90
–90
–90
mV
Input low AC voltage: Logic 0
VIL(AC125),min5
–
–
–130
mV
5
–135
–135
–135
mV
5
–160
–160
–
mV
VIL(AC135),min
VIL(AC160),min
Notes:
1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All
slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ
and DM inputs.
2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC).
3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC).
4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is
900mV (peak-to-peak).
5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/
command inputs must use either VIH(AC160),min with tIS(AC160) of 210ps or VIH(AC150),min
with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min
with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.
CCMTD-1725822587-7895
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Table 44: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
Parameter/Condition
Symbol
Min
Max
Units
Notes
Differential input logic high – slew
VIH,diff(AC)slew
180
N/A
mV
4
Differential input logic low – slew
VIL,diff(AC)slew
N/A
–180
mV
4
Differential input logic high
VIH,diff(AC)
2 × (VIH(AC) - VREF)
VDD/VDDQ
mV
5
Differential input logic low
VIL,diff(AC)
VSS/VSSQ
2 × (VIL(AC) - VREF)
mV
6
Differential input crossing voltage
relative to VDD/2 for DQS, DQS#;
CK, CK#
VIX
VREF(DC) - 150
VREF(DC) + 150
mV
5, 7, 9
Differential input crossing voltage
relative to VDD/2 for CK, CK#
VIX (175)
VREF(DC) - 175
VREF(DC) + 175
mV
5, 7–9
VDDQ/2 + 160
VDDQ
mV
5
VDD/2 + 160
VDD
mV
5
VSSQ
VDDQ/2 - 160
mV
6
VSS
VDD/2 - 160
mV
6
Single-ended high level for strobes
VSEH
Single-ended high level for CK,
CK#
Single-ended low level for strobes
Single-ended low level for CK, CK#
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
VSEL
Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ.
Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe.
Differential input slew rate = 2 V/ns.
Defines slew rate reference points, relative to input crossing voltages.
Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable.
Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable.
The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device,
and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which
differential input signals must cross.
The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range
is only allowed when the following conditions are met: The single-ended input signals
are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 ±250mV, and
the differential slew rate of CK, CK# is greater than 3 V/ns.
VIX must provide 25mV (single-ended) of the voltages separation.
55
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 11: DDR3L 1.35V Input Signal
VDD + 0.4V
Narrow pulse width
Minimum VIL and VIH levels
VIH MIN(AC)
VIH MIN(DC)
VIH(AC)
VIH(DC)
VIL MIN(AC)
VDD
VIL(DC)
VIL(AC)
VREF + 125/135/160mV
VIH(AC)
VREF + 90mV
VIH(DC)
VREFDQ + AC noise
VREFDQ + DC error
VREFDQ - DC error
VREFDQ - AC noise
VREF - 90mV
VIL(DC)
VREF - 125/135/160mV
VIL(AC)
0.0V
VSS
VSS - 0.40V
Undershoot
VSS - 0.40V
Narrow pulse width
Note:
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
VDDQ + 0.4V
Overshoot
VDDQ
VREF DC MAX + 1%
.51 x VDD
VREF = VDD/2
.49 x VDD
VREF DC MIN - 1% VDD
MAX 2% Total
VREF DC MAX
VREF
DC MIN
MAX 2% Total
VIL MIN(DC)
VIL and VIH levels with ringback
1. Numbers in diagrams reflect nominal values.
56
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
DDR3L 1.35V AC Overshoot/Undershoot Specification
Table 45: DDR3L Control and Address Pins
DDR3L-800
DRR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
Maximum peak amplitude allowed
for overshoot area
(see Figure 12)
Parameter
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed
for undershoot area
(see Figure 13)
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area above VDD
(see Figure 12)
0.67 Vns
0.5 Vns
0.4 Vns
0.33 Vns
0.28 Vns
Maximum undershoot area below VSS
(see Figure 13)
0.67 Vns
0.5 Vns
0.4 Vns
0.33 Vns
0.28 Vns
Table 46: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins
Parameter
DDR3L-800
DDR3L-1066
DDR3L-1333
DDR3L-1600
DDR3L-1866
Maximum peak amplitude allowed
for overshoot area
(see Figure 12)
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum peak amplitude allowed
for undershoot area
(see Figure 13)
0.4V
0.4V
0.4V
0.4V
0.4V
Maximum overshoot area above
VDD/VDDQ (see Figure 12)
0.25 Vns
0.19 Vns
0.15 Vns
0.13 Vns
0.11 Vns
Maximum undershoot area below
VSS/VSSQ (see Figure 13)
0.25 Vns
0.19 Vns
0.15 Vns
0.13 Vns
0.11 Vns
Figure 12: Overshoot
Maximum amplitude
Volts (V)
Overshoot area
VDD/VDDQ
Time (ns)
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 13: Undershoot
VSS/VSSQ
Volts (V)
Undershoot area
Maximum amplitude
Time (ns)
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 14: VIX for Differential Signals
VDD, VDDQ
VDD, VDDQ
CK#, DQS#
CK#, DQS#
X
VIX
VIX
VDD/2, VDDQ/2
X
X
VDD/2, VDDQ/2
VIX
X
VIX
CK, DQS
CK, DQS
VSS, VSSQ
VSS, VSSQ
Figure 15: Single-Ended Requirements for Differential Signals
VDD or VDDQ
VSEH,min
VDD/2 or VDDQ/2
VSEH
CK or DQS
VSEL,max
VSEL
VSS or VSSQ
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
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© 2015 Micron Technology, Inc. All rights reserved.
2Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
Figure 16: Definition of Differential AC-Swing and tDVAC
tDVAC
VIH,diff(AC)min
VIH,diff,min
CK - CK#
DQS - DQS#
0.0
VIL,diff,max
VIL,diff(AC)max
tDVAC
Half cycle
Table 47: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC
Ringback
DDR3L-800/1066/1333/1600
tDVAC
tDVAC
DDR3L-1866
tDVAC
tDVAC
tDVAC
Slew Rate (V/ns)
at
320mV (ps)
at
270mV (ps)
at
270mV (ps)
at
250mV (ps)
at
260mV (ps)
>4.0
189
201
163
168
176
4.0
189
201
163
168
176
3.0
162
179
140
147
154
2.0
109
134
95
105
111
1.8
91
119
80
91
97
1.6
69
100
62
74
78
1.4
40
76
37
52
55
1.2
Note1
44
5
22
24
1.0
Note1
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